Title :
Surface charging effects on current stability of AlGaN/GaN HEMTs
Author :
Nishiguchi, Kenya ; Hashizume, Tamotsu
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Using a dual-gate transistor structure, we have evaluated the effect of off-bias-stress spatially induced surface charging at the AlGaN/GaN surface. Pulsed voltage stress on the drain access region led only to increase in the on-resistance, whereas the stress on the source region additionally decreased the saturation drain current. In addition, significant surface charging in the access region resulted in a threshold voltage shift. The 2D potential simulation indicated that surface negative charges modulate the potential distribution near the gate edge. It was also found that such surface charging can extend as far as 0.5 μm from the stressing gate edge.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; surface charging; wide band gap semiconductors; 2D potential simulation; AlGaN-GaN; HEMT; current stability; drain access region; dual-gate transistor structure; gate edge; high electron mobility transistors; off-bias-stress spatially induced surface charging; on-resistance; pulsed voltage stress; saturation drain current; source region; surface negative charges; threshold voltage shift; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Stress; Surface charging; AlGaN; GaN; HEMT; current collapse;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867067
