Title :
Heteroepitaxial growth of InSb thin films on a Ge(111) substrate
Author :
Mitsueda, T. ; Sakamoto, T. ; Shimoyama, H. ; Mori, M. ; Maezawa, K.
Author_Institution :
Grad. Sch. of Sci. & Eng., Univ. of Toyama, Toyama, Japan
Abstract :
This paper discusses characteristics of the InSb films on Ge substrate. To grow high quality InSb films on Ge substrate, we tried to optimize the growth conditions. We carried out the direct growth of the InSb films on Ge(111) substrate by using two-step growth procedure. At first, we studied the effect of the growth temperature and thickness of the first layer.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Ge; Ge(111) substrate; InSb; heteroepitaxial growth; thin films; Crystals; Epitaxial growth; Lattices; Substrates; Surface reconstruction; Surface treatment; Ge; Heteroepitaxial Growth; InSb;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867069
