Title :
Resistive hysteresis of BaTiO3 ferroelectric thin film prepared by MOD method
Author :
Hashimoto, Shuhei ; Fuchida, Shinpei ; Syu Ou ; Yamashita, Kaoru ; Noda, Minoru
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
An MOD-made BaTiO3 (BT) thin film was prepared for investigating the relation between its ferroelectric properties and the behavior of resistive hysteresis. For the ferroelectric 110 nm-thickness BT film, its coercive field is observed to relate quantitatively to the characteristics of resistive hysteresis, where the current on/off ratio is obtained as 1-2 orders of magnitude. We consider that the ferroelectricity in the film makes a different type of behavior in resistive hysteresis and is effective for improving the behavior.
Keywords :
barium compounds; chromium; dielectric hysteresis; ferroelectric capacitors; ferroelectric ceramics; ferroelectric coercive field; ferroelectric thin films; gold; platinum; silicon; silicon compounds; spin coating; Au-Cr-BaTiO3-Pt-SiO2-Si; MOD method; coercive field; current on-off ratio; ferroelectric properties; ferroelectric thin film; metal-organic-decomposition method; resistive hysteresis; size 110 nm; Annealing; Atmospheric measurements; Capacitors; Electric fields; Films; Hysteresis; Temperature; BaTiO3; MOD(Metal-Organic-Decomposition); current on/off ratio; ferroelectric; resistive hysteresis;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867072
