• DocumentCode
    1770905
  • Title

    Spectroscopic electrical characterization of post-resistive-transition SiO2 films

  • Author

    Yamaguchi, R. ; Sato, S. ; Omura, Y. ; Nakamura, K.

  • Author_Institution
    Grad. Sch. Sci. & Eng., Kansai Univ., Suita, Japan
  • fYear
    2014
  • fDate
    19-20 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.
  • Keywords
    band structure; current fluctuations; electrical conductivity transitions; electrical resistivity; silicon compounds; thin films; SiO2; current fluctuation; electronic structure; post-resistive-transition films; resistance state; spectroscopic electrical characterization; Educational institutions; Electrodes; Films; Fluctuations; Insulators; Leakage currents; Resistance; Resistive transition; SiO2 film; current fluctuation; electronic structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-3614-4
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2014.6867074
  • Filename
    6867074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770905