DocumentCode :
1770905
Title :
Spectroscopic electrical characterization of post-resistive-transition SiO2 films
Author :
Yamaguchi, R. ; Sato, S. ; Omura, Y. ; Nakamura, K.
Author_Institution :
Grad. Sch. Sci. & Eng., Kansai Univ., Suita, Japan
fYear :
2014
fDate :
19-20 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.
Keywords :
band structure; current fluctuations; electrical conductivity transitions; electrical resistivity; silicon compounds; thin films; SiO2; current fluctuation; electronic structure; post-resistive-transition films; resistance state; spectroscopic electrical characterization; Educational institutions; Electrodes; Films; Fluctuations; Insulators; Leakage currents; Resistance; Resistive transition; SiO2 film; current fluctuation; electronic structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
Type :
conf
DOI :
10.1109/IMFEDK.2014.6867074
Filename :
6867074
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1770905
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