DocumentCode :
1770908
Title :
Maximum and minimum voltage sample and hold circuits employing operational amplifiers composed of polycrystalline silicon thin-film transistors
Author :
Ohno, Yasuhiko ; Ito, Yoshihiro ; Nagase, Yosuke ; Yoshikawa, Akito ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
fYear :
2014
fDate :
19-20 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We have developed maximum and minimum voltage sample and hold circuits employing operational amplifiers (OPAMPs) composed of polycrystalline silicon (poly-Si) thin-film transistors (TFTs). It was confirmed that the maximum and minimum voltages are successfully sampled and held. It was also confirmed that the restoring ratio has a peak near a certain value of the operation frequency. We would like you to propose novel applications using these circuits.
Keywords :
elemental semiconductors; operational amplifiers; sample and hold circuits; silicon; thin film transistors; transistor circuits; OPAMPs; TFTs; maximum voltage sample and hold circuits; minimum voltage sample and hold circuits; operation frequency; operational amplifiers; polycrystalline silicon thin-film transistors; Collaboration; Educational institutions; Indium tin oxide; Informatics; Operational amplifiers; Silicon; Thin film transistors; maximum voltage; minimum voltage; operational amplifier; polycrystalline silicon (poly-Si); sample and hold circuit; thin-film transistor (TFT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
Type :
conf
DOI :
10.1109/IMFEDK.2014.6867076
Filename :
6867076
Link To Document :
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