Title :
Magnetic field sensitivity of poly-Si Hall device improved by high voltage application
Author :
Yoshikawa, Akito ; Tadokoro, Daiki ; Yamaguchi, Yohei ; Matsuda, Tokiyoshi ; Kimura, Mutsumi ; Ozawa, Tokuro ; Aoki, Koji ; Chih-Che Kuo
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
Keywords :
elemental semiconductors; magnetic fields; sensitivity analysis; silicon; Si; high voltage application; magnetic field sensitivity; poly-Si Hall device; voltage 580 V; Films; Hall effect; Heating; Magnetic fields; Real-time systems; Sensitivity; Silicon; Hall device; high voltage; magnetic field; poly-Si; sensitivity;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867077
