Title :
Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding
Author :
Takemura, K. ; Morimoto, M. ; Nishida, S. ; Liang, J. ; Shigekawa, N.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
Keywords :
elemental semiconductors; p-n junctions; scanning electron microscopy; silicon; sputter etching; SEM observation; Si; capacitance-voltage characteristics; current-voltage characteristics; mesa-etched silicon p-n junctions; reactive ion etching; surface activated bonding; Arrays; Bonding; Capacitance-voltage characteristics; Junctions; Silicon; Substrates; Surface treatment; Si; mesa; pillar array solar cells; surface activated bonding;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867078
