DocumentCode
1770912
Title
Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding
Author
Takemura, K. ; Morimoto, M. ; Nishida, S. ; Liang, J. ; Shigekawa, N.
Author_Institution
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
fYear
2014
fDate
19-20 June 2014
Firstpage
1
Lastpage
2
Abstract
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
Keywords
elemental semiconductors; p-n junctions; scanning electron microscopy; silicon; sputter etching; SEM observation; Si; capacitance-voltage characteristics; current-voltage characteristics; mesa-etched silicon p-n junctions; reactive ion etching; surface activated bonding; Arrays; Bonding; Capacitance-voltage characteristics; Junctions; Silicon; Substrates; Surface treatment; Si; mesa; pillar array solar cells; surface activated bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-3614-4
Type
conf
DOI
10.1109/IMFEDK.2014.6867078
Filename
6867078
Link To Document