Title :
Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
Author :
Chai, L. ; Liang, J. ; Nishida, S. ; Morimoto, M. ; Shigekawa, N.
Author_Institution :
Grad. Sch. of Eng., Osaka City Univ., Osaka, Japan
Abstract :
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400°C. We also investigated the effects of the annealing on the current-voltage characteristics of n+-GaAs/n++-Si and p+-GaAs/n++-Si junctions.
Keywords :
III-V semiconductors; annealing; bonding processes; gallium arsenide; semiconductor junctions; silicon; solar cells; transmission electron microscopy; GaAs-Si; III-V-on-silicon; amorphous layer; annealing effect; bonding interface; cross sectional transmission electron microscope; hybrid tandem solar cell; semiconductor junction; surface active bonding method; temperature 400 C; Annealing; Bonding; Gallium arsenide; Junctions; Resistance; Silicon; Substrates; GaAs; Si; bonding interface; tandem solar cells;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867079
