Title :
Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment
Author :
Yi-Wei Liao ; Sato, Yusuke ; Kajii, Hirotake ; Ohmori, Yutaka
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at -2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.
Keywords :
II-VI semiconductors; gallium; monolayers; photodetectors; polymers; self-assembly; zinc compounds; 2,3,4,5,6-pentafluorobenzylphosphonic acid; FBPA treatment; IPCE; P3HT:PCBM device; ZnO:Ga; [6-6]phenyl-C61- butyric acid methyl ester; acceptor; dark current; donor; fullerene derivative; green light irradiation; incident-photon-to-current conversion efficiency; phosphonic acid-based self-assembled monolayer treatment; poly(3-hexylthiophene); polymer photodetector; Dark current; Electrodes; Photodetectors; Polymers; Radiation effects; Substrates; Surface treatment; GZO; photodetector detectivity; polymer photodetectors; self assembled molecular;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867080
