DocumentCode :
1770920
Title :
Design of CMOS resonating push-push frequency doubler
Author :
Adachi, Hiroshi ; Motoyoshi, Mizuki ; Takano, Kyoya ; Katayama, Kosuke ; Amakawa, Shuhei ; Yoshida, Takeshi ; Fujishima, Minoru
Author_Institution :
Fac. of Eng., Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2014
fDate :
19-20 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
Keywords :
CMOS integrated circuits; MOSFET circuits; frequency multipliers; CMOS resonating push-push frequency doubler; conversion gain; differentially driven MOSFET; CMOS integrated circuits; Frequency conversion; Gain; MOSFET; Power generation; Power transmission lines; Resonant frequency; CMOS; frequency multiplier; millimeter-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
Type :
conf
DOI :
10.1109/IMFEDK.2014.6867082
Filename :
6867082
Link To Document :
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