Title :
Power electronics innovation by Silicon Carbide power semiconductor devices
Author_Institution :
Adv. Power Electron. Res. Center (ADPERC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].
Keywords :
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; power electronics innovation; silicon carbide power semiconductor devices; widegap semiconductor power electronics; Inverters; Power systems; Silicon; Silicon carbide; Switches; Technological innovation; Electric Power Conversion; Inverter; Power Electronics; Power Semiconductor Device; SiC; Silicon Carbide;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867086
