Heterogeneously integrated nanowires and thin films for flexible electronics

Author

Wong, William S. ; Chow, Melissa J. ; Pathirane, Minoli ; Iheanacho, Bright ; Czang-Ho Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada

fYear

2014

fDate

2-4 July 2014

Firstpage

37

Lastpage

40

Abstract

The electrical stability of flexible a-Si:H thin-film transistors (TFT) under mechanical bending is given. The electrical stability was found to be dependent on the strain state of the applied bending during dc-gate bias of the TFT. The heterogeneous integration of hybrid thin-film/nanowire structures on polyeth ylene napthalate substrates is also described. The a-Si:H coated nanowires were found to h ave approximately half of the optical reflectivity due to light scattering of the 3-D hybrid structures compared to planar thin films.

Keywords

amorphous semiconductors; bending; flexible electronics; hydrogen; nanoelectronics; nanowires; silicon; thin film transistors; 3D hybrid structures; Si:H; TFT; dc-gate bias; electrical stability; flexible electronics; flexible thin-film transistors; heterogeneous integration; heterogeneously integrated nanowires; hybrid thin-film-nanowire structures; light scattering; mechanical bending; optical reflectivity; planar thin films; polyethylene napthalate substrates; strain state; thin films; Nanowires; Reflectivity; Strain; Substrates; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867116

Filename

6867116