Title :
Heterogeneously integrated nanowires and thin films for flexible electronics
Author :
Wong, William S. ; Chow, Melissa J. ; Pathirane, Minoli ; Iheanacho, Bright ; Czang-Ho Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
The electrical stability of flexible a-Si:H thin-film transistors (TFT) under mechanical bending is given. The electrical stability was found to be dependent on the strain state of the applied bending during dc-gate bias of the TFT. The heterogeneous integration of hybrid thin-film/nanowire structures on polyeth ylene napthalate substrates is also described. The a-Si:H coated nanowires were found to h ave approximately half of the optical reflectivity due to light scattering of the 3-D hybrid structures compared to planar thin films.
Keywords :
amorphous semiconductors; bending; flexible electronics; hydrogen; nanoelectronics; nanowires; silicon; thin film transistors; 3D hybrid structures; Si:H; TFT; dc-gate bias; electrical stability; flexible electronics; flexible thin-film transistors; heterogeneous integration; heterogeneously integrated nanowires; hybrid thin-film-nanowire structures; light scattering; mechanical bending; optical reflectivity; planar thin films; polyethylene napthalate substrates; strain state; thin films; Nanowires; Reflectivity; Strain; Substrates; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867116
