Bar-coated polymer ambipolar field-effect transistors and complementary integrated circuits for large area electronics

We demonstrate a large area, a simple wire bar-coated polymer FETs array and ICs. Both a highly crystalline conjugated polymer and very smooth insulating polymer layers were formed by the consecutive wire bar-coating process over 4 inch sized substrate within a short processing time for applications of the active and dielectric layer of OFET array and ICs. The bar-coated top-gate/bottom-contact (TG/BC) OFETs based on the DPPT-TT and PMMA polymer dielectrics showed a charge carrier mobility as high as 2.74 cm² V^-1 s^-1 as well as excellent device-to-device performance uniformity in 4 inch sized transistor arrays. Last, we developed bar-coated ambipolar complymentary inverters (voltage gain >40) and ring oscillators (ROs) (oscillation frequency f_osc of ~ 25 KHz).