Title :
Fabrication of indium-tin-oxide thin-film transistor using anodization
Author :
Lei Xie ; Yang Shao ; Xiang Xiao ; Letao Zhang ; Xiaobin Bi ; Shengdong Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
Thin-film transistors based on anodized indium-tin-oxide (ITO) active layer and anodic tantalum oxide (Ta2O5) gate dielectric were investigated. The electrical and optical properties of ITO film can be affected by an anodization treatment. The anodized ITO TFT shows an on/off current ratio of 108, a saturation mobility of 28.8 cm2V-1s-1, a subthreshold swing of 0.51 V/dec, and a threshold voltage of -2.5 V It is also shown that the ITO film shows higher resistivity and porous structure after anodized at various anodization voltage Va. Also, the surface of the ITO film becomes less porous and the resistivity rises as the anodization current density Ja increases.
Keywords :
anodisation; current density; dielectric thin films; indium compounds; porous materials; tantalum compounds; thin film transistors; ITO-Ta2O3; anodic tantalum oxide gate dielectric; anodization treatment; current density; electrical property; indium-tin-oxide; on-off current ratio; optical property; porous structure; saturation mobility; subthreshold swing; thin-film transistor; threshold voltage; voltage -2.5 V; Conductivity; Current density; Films; Indium tin oxide; Oxidation; Thin film transistors; Threshold voltage;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867136
