Fabrication of indium-tin-oxide thin-film transistor using anodization

Author

Lei Xie ; Yang Shao ; Xiang Xiao ; Letao Zhang ; Xiaobin Bi ; Shengdong Zhang

Author_Institution

Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

fYear

2014

fDate

2-4 July 2014

Firstpage

101

Lastpage

103

Abstract

Thin-film transistors based on anodized indium-tin-oxide (ITO) active layer and anodic tantalum oxide (Ta₂O₅) gate dielectric were investigated. The electrical and optical properties of ITO film can be affected by an anodization treatment. The anodized ITO TFT shows an on/off current ratio of 10⁸, a saturation mobility of 28.8 cm²V^-1s^-1, a subthreshold swing of 0.51 V/dec, and a threshold voltage of -2.5 V It is also shown that the ITO film shows higher resistivity and porous structure after anodized at various anodization voltage V_a. Also, the surface of the ITO film becomes less porous and the resistivity rises as the anodization current density J_a increases.

Keywords

anodisation; current density; dielectric thin films; indium compounds; porous materials; tantalum compounds; thin film transistors; ITO-Ta₂O₃; anodic tantalum oxide gate dielectric; anodization treatment; current density; electrical property; indium-tin-oxide; on-off current ratio; optical property; porous structure; saturation mobility; subthreshold swing; thin-film transistor; threshold voltage; voltage -2.5 V; Conductivity; Current density; Films; Indium tin oxide; Oxidation; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867136

Filename

6867136