Title :
Study on the transition between p and n types of SnOx film deposited by DC sputtering
Author :
Meng, Stefan Weizhi ; Letao Zhang ; Xiang Xiao ; Shengdong Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
The influence of deposition conditions on the electrical characteristics of SnOx thin films deposited by direct current (DC) sputtering is presented in this paper. The influence of deposition process on the transition conditions between p-type and n-type SnOx thin films is systematically investigated for the first time. The results show that with the increase of oxygen partial pressure, depositing temperature and DC power, the conduction type of SnOx thin film switches from p-type to n-type. An n-type SnOx TFT is then successfully fabricated based on obtained conditions of the n-type SnOx thin film.
Keywords :
electrical conductivity; hafnium; hafnium compounds; metal-semiconductor-metal structures; nickel; semiconductor growth; semiconductor materials; semiconductor thin films; silicon compounds; sputter deposition; thin film transistors; tin compounds; Ni-SnOx-HfO2-Hf-SiO2; SiO2; TFT; dc sputtering deposition; direct current sputtering; electrical properties; n-type conduction; p-type conduction; thin films; Annealing; Fabrication; Films; Sputtering; Temperature; Temperature measurement; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867138
