Title :
Facile oxygen-plasma approach for depositing Silicon/nitride oxide on transparent, flexible zinc-oxide thin film transistors
Author :
Cheng-Jyun Wang ; Hsin-Chiang You ; Yu-Hsien Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chin-Yi Univ. of Technol., Taichung, Taiwan
Abstract :
This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) substrate. The effect of an oxygen (O2) plasma power of 18 W followed by low temperature (~approximately 150 °C) annealing on a hot plate was evaluated, attempting to enhance on/off current ratio and sustainability of ZnO-TFTs. ZnO based TFTs fabricated on silicon oxide and nitride oxide exhibited on/off ratio of~approximately 103 and 108, respectively without O2 plasma; these ratios can be improved to ~approximately 106 by using oxygen plasma treatment. The PI substrate exhibited an on/off ratio of ~approximately 108.
Keywords :
II-VI semiconductors; annealing; flexible electronics; low-temperature techniques; nitrogen compounds; plasma deposition; polymers; semiconductor thin films; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; NO2; PI substrate; Si; SiO2; TFT; ZnO; facile oxygen-plasma treatment approach; flexible polyimide substrate; hot plate; low temperature annealing; on-off current ratio; power 18 W; semiconducting channel layer; silicon-nitride oxide deposition; transparent flexible zinc-oxide thin film transistors; Plasmas; Silicon; Substrates; Surface treatment; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867140
