Title :
Extreme bending test of IGZO TFT
Author :
Sejin Hong ; Mativenga, Mallory ; Jin Jang
Author_Institution :
Dept. of Inf. Display, KyungHee Univ., Seoul, South Korea
Abstract :
We fabricated foldable amorphous-indium-gallium zinc-oxide (a-IGZO) thin-film transistors (TFTs) on 15 um-thick polyimide (PI). The PI is spin coated on a carrier glass during device fabrication, and then manually detached from the carrier glass. TFTs perform well after repeated folding to a 90°angle. When the channel is parallel to the stress direction, TFT transfer characteristics show degradations in μFE and on-current as a result of metal line cracks. However, by employing split-type electrodes, metal line cracks were significantly reduced, resulting in improved device performance under extreme bending conditions.
Keywords :
gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; PI; TFT transfer characteristics; carrier glass; device fabrication; device performance improvement; extreme bending test; metal line cracks; polyimide; size 15 mum; split-type electrodes; stress direction; thin-film transistors; Degradation; Glass; Logic gates; Metals; Performance evaluation; Stress; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867145
