Title :
Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3
Author :
Nguyen, Thi Thu Thuy ; Aventurier, Bernard ; Renault, Olivier ; Terlier, Tanguy ; Barnes, Jean-Paul ; Templier, Francois
Author_Institution :
Opt. & Photonics Dept., CEA-Leti, Grenoble, France
Abstract :
The degradation of electrical parameters of non-passivated IGZO TFTs is showed, which exhibited the indispensability of a passivation layer. After that, the electrical characteristics obtained by passivating TFTs by SiO2 (PECVD) or Al2O3 (ALD), is reported. Some results of SIMS and XPS analysis are presented to discuss the origins of passivated TFTs comportment, concretely, the diffusion of hydrogen into IGZO channel. We proposed finally some methods to eliminate this degradation.
Keywords :
X-ray photoelectron spectra; alumina; diffusion; gallium compounds; hydrogen; indium compounds; passivation; secondary ion mass spectra; semiconductor materials; silicon compounds; thin film transistors; zinc compounds; Al2O3; IGZO TFT; InGaZnO:H; SIMS; SiO2; XPS; electrical characteristics; electrical parameters; hydrogen diffusion; Aluminum oxide; Degradation; Hydrogen; Passivation; Plasmas; Thin film transistors; Threshold voltage;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867154
