Title :
High performance four-masks GOLDD TFT structure without additional ion implantation
Author :
Chien-Ming Chen ; Feng-Tso Chien
Author_Institution :
Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan
Abstract :
In this paper, a novel gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure have been proposed for TFT device application. Using GOLDD and RSD structure, a low electric field between channel and drain region can be obtained. Compared to the conventional TFT device, the new structure exhibits a better breakdown voltage and a low kink effect due to the reduced electric field. Therefore, the novel poly-Si TFT structure is suitable to be used in active-matrix flat panel electronics.
Keywords :
semiconductor device breakdown; thin film transistors; breakdown voltage; gate-overlapped lightly doped drain; high performance four-masks GOLDD TFT structure; kink effect; low electric field; raised source/drain structure; Electric fields; Impact ionization; Ion implantation; Logic gates; Proposals; Silicon; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867160
