DocumentCode :
1771051
Title :
Effect of quantum confinement in Si-QD on free-carrier modulation bandwidth and cross-section of the SiOx:Si-QD waveguide
Author :
Chung-Lun Wu ; Sheng-Pin Su ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
The free-carrier cross-section of Si-QD is decreased from 5.5×10-17 to 9×10-18 cm2 with shortened lifetime from 10 to 0.48 μs when shrinking Si-QD size from 4.3 to 1.7 nm due to the quantum confinement effect.
Keywords :
elemental semiconductors; optical waveguides; semiconductor quantum dots; silicon; Si; Si-QD; free-carrier cross-section; free-carrier modulation bandwidth; lifetime; quantum confinement; quantum dot; size 4.3 nm to 1.7 nm; time 10 mus to 0.48 mus; waveguide; Fitting; Laser excitation; Measurement by laser beam; Modulation; Optical waveguides; Probes; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989237
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771051
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