Improvement of crystalline quality of poly-Si thin films crystallized on YSZ layers by new two-step irradiation method with PLA

Crystalline quality of pulse-laser annealed poly-Si films on YSZ layers is further improved by a new two-step irradiation method, in which a-Si films were irradiated using two kinds of energy. Firstly, they were irradiated at low energy for a short time to generate nuclei, following by irradiation at high energy to speed up crystallization of the Si films. Crystalline fraction and grain size of Si film crystallized by the two-step method were found to be larger while its FWHM was smaller than those by the conventional one. Moreover, grain size of Si/YSZ/glass was more uniform than that of Si/glass. This indicates effectiveness of YSZ on crystallization-induction effect and usefulness of the two-step method on improving Si film quality.