Improvement of crystalline quality of poly-Si thin films crystallized on YSZ layers by new two-step irradiation method with PLA

Author

Mai Thi Kieu Lien ; Horita, Satoshi

Author_Institution

Japan Adv. Inst. Sci. & Tech., Nomi, Japan

fYear

2014

fDate

2-4 July 2014

Firstpage

185

Lastpage

188

Abstract

Crystalline quality of pulse-laser annealed poly-Si films on YSZ layers is further improved by a new two-step irradiation method, in which a-Si films were irradiated using two kinds of energy. Firstly, they were irradiated at low energy for a short time to generate nuclei, following by irradiation at high energy to speed up crystallization of the Si films. Crystalline fraction and grain size of Si film crystallized by the two-step method were found to be larger while its FWHM was smaller than those by the conventional one. Moreover, grain size of Si/YSZ/glass was more uniform than that of Si/glass. This indicates effectiveness of YSZ on crystallization-induction effect and usefulness of the two-step method on improving Si film quality.

Keywords

crystallisation; laser beam annealing; organic semiconductors; polymer films; semiconductor thin films; yttrium compounds; zirconium compounds; SiO₂; Y₂O₃-ZrO₂; crystalline quality; crystallization-induction effect; grain size; irradiation method; polysilicon thin films; pulse-laser annealing; Annealing; Crystallization; Films; Glass; Radiation effects; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867166

Filename

6867166