Title :
Effect of ozone radical treatment for high-performance poly-Si TFTs
Author :
Hirata, Takaomi ; Kuroki, Shin-Ichiro ; Yamano, Masayuki ; Sato, Takao ; Kotani, Koji ; Kikkawa, Takamaro
Author_Institution :
Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ. (RNBS), Higashi-Hiroshima, Japan
Abstract :
High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.
Keywords :
carrier mobility; elemental semiconductors; grain boundaries; silicon; thin film transistors; LTPS-TFT; carrier mobility; current-leakage path; grain boundary; grain boundary bridge; high-performance low-temperature poly-silicon thin film transistor; high-performance poly-silicon TFT; off-leakage current reduction; one-dimensionally-elongated long-crystal grains; ozone radical treatment; Gases; Grain boundaries; Laser beams; Liquid crystals; Resistance; Silicon; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867167
