• DocumentCode
    1771075
  • Title

    Investigation of photoluminescence from Ge1−xSnx: A CMOS-compatible material grown on Si via CVD

  • Author

    Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Conley, Benjamin R. ; Liang Huang ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Naseem, Hameed A. ; Shuiqing Yu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Photoluminescence (PL) from Ge1-xSnx grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures.
  • Keywords
    chemical vapour deposition; germanium compounds; photoluminescence; semiconductor growth; CMOS-compatible material growth; CVD; Ge1-XSnX; direct band transition; indirect band transition; photoluminescence; Educational institutions; Films; Photoluminescence; Photonic band gap; Silicon; Strain; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771075