DocumentCode :
1771086
Title :
Structural characterization and luminescence properties of ErxSc2−xSi2O7 prepared by RF sputtering
Author :
Najar, A. ; Omi, H. ; Tawara, T.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Polycrystalline ErxSc2-xSi2O7 compounds were fabricated using RF-sputtering by alternating Er2O3, Sc2O3 layers separated by SiO2 layer. This new compounds presents excitation cross section at 980nm around 1.39×10-21cm2 with lifetime of 38 μs.
Keywords :
erbium compounds; photoluminescence; scandium compounds; sputter deposition; ErxSc2-xSi2O7; RE sputtering; luminescence properties; polycrystalline compounds; structural characterization; Annealing; Compounds; Erbium; Optical amplifiers; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989252
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771086
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