DocumentCode :
1771100
Title :
Low temperature ZnO TFT fabricated on SiOx gate insulator deposited by facing electrodes chemical vapor deposition
Author :
Matsuda, Tadamitsu ; Furuta, Mamoru ; Hiramatsu, Toshiyuki ; Furuta, Hiroshi ; Kimura, Mizue ; Hirao, Takami
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
fYear :
2014
fDate :
2-4 July 2014
Firstpage :
267
Lastpage :
268
Abstract :
Low temperature TFT was fabricated on SiOx insulator film deposited with novel line shaped plasma source, namely, facing electrodes CVD (FE-CVD). The plasma was generated with magnetic field and RF power source applied to the two facing SiO2 targets. The insulating film was deposited with mixture of tetramethylsilane and oxygen as source gases at high deposition rate at 11.6 nm/min. Insulating properties were demonstrated with transfer characteristics of TFT with ZnO channel.
Keywords :
II-VI semiconductors; electrochemical electrodes; insulators; plasma CVD; plasma sources; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; FE-CVD; RF power source; ZnO-SiOx; facing electrode chemical vapor deposition; gate insulator film deposition; line shaped plasma source; low temperature TFT; magnetic field; plasma generation; tetramethylsilane mixture; Films; Insulators; Plasma temperature; Substrates; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/AM-FPD.2014.6867191
Filename :
6867191
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771100
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