Homojunction In2O3-TFTs prepared by anodization technique

In this paper, the preparation of In₂O₃ film and the fabrication of the In₂O₃ homojunction TFTs using anodization technology are reported. It is shown that the resistivity of In₂O₃ film increases significantly, and the structure becomes porous after the anodization processing. The In₂O₃ homojunction TFTs from a 30 V anodization voltage have a mobility of 20.8 cm²/V·s, a threshold voltage of -4.7 V, a SS of 1.20 V/dec, and a drain current on/off ratio of 6.1×10⁸, which are very suitable for application in high-performance, fully-transparent displays. These results suggest that anodization is a promising simple technology to fabricate good-performance In₂O₃-TFTs with lower cost.