High performance raised source/drain thin film transistor with field plate design

Author

Kuan-Ting Lin ; Feng-Tso Chien

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2014

fDate

2-4 July 2014

Firstpage

335

Lastpage

338

Abstract

In this paper, we propose a high-performance raised source/drain polycrystalline thin film transistor with a field plate structure (FPRSD-TFT) design. The FP structure induces the change of current path to reduce the impact-ionization to improve the kink effect. This is because the current path is far away from the high electric field region. Therefore, the electric field of FPRSD can be reduced by the RSD design. Besides, the kink effect and the leakage current are simultaneously improved. Moreover, the ON/OFF current ratio of the FPRSD-TFT is also higher than that of the conventional TFT.

Keywords

elemental semiconductors; ionisation; leakage currents; silicon; thin film transistors; FP structure; FPRSD-TFT design; ON-OFF current ratio; RSD design; current path; field plate design; field plate structure; high electric field region; high-performance raised source-drain polycrystalline thin film transistor; impact-ionization reduction; kink effect; leakage current; Amorphous silicon; Electric fields; Leakage currents; Logic gates; Thin film transistors; Field plate (FP); ON/OFF current ratio; impactionization; kink effect; raised source/drain (RSD); thin film transistor (TFT);

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2014.6867212

Filename

6867212