Title :
High performance raised source/drain thin film transistor with field plate design
Author :
Kuan-Ting Lin ; Feng-Tso Chien
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
In this paper, we propose a high-performance raised source/drain polycrystalline thin film transistor with a field plate structure (FPRSD-TFT) design. The FP structure induces the change of current path to reduce the impact-ionization to improve the kink effect. This is because the current path is far away from the high electric field region. Therefore, the electric field of FPRSD can be reduced by the RSD design. Besides, the kink effect and the leakage current are simultaneously improved. Moreover, the ON/OFF current ratio of the FPRSD-TFT is also higher than that of the conventional TFT.
Keywords :
elemental semiconductors; ionisation; leakage currents; silicon; thin film transistors; FP structure; FPRSD-TFT design; ON-OFF current ratio; RSD design; current path; field plate design; field plate structure; high electric field region; high-performance raised source-drain polycrystalline thin film transistor; impact-ionization reduction; kink effect; leakage current; Amorphous silicon; Electric fields; Leakage currents; Logic gates; Thin film transistors; Field plate (FP); ON/OFF current ratio; impactionization; kink effect; raised source/drain (RSD); thin film transistor (TFT);
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2014.6867212
