Recent progress in near-infrared vertical external cavity surface emitting laser (VECSEL) grown by metal organic vapour phase epitaxy (MOVPE)

Summary form only given. The application of a specific metal organice vapour phase epitaxy (MOVPE) growth process for (GaIn)As-based VECSEL using thermally more efficiently decomposing MO-group-V-sources results in an extended wavelength range and facilitates the necessary strain compensation of the highly compressive-strained (GaIn)As-quantum well layers by tensile-strained Ga(PAs) barrier layers. Applying a closed-loop-design concept of detailed microscopic modelling and experimental realization as well as laser characterization allows for an efficient optimization of these complex laser devices. Recent developments for the realization of high-power VECSEL with continuous wave (cw) output powers in excess of 100 W will be presented and discussed. The detailed understanding of the mounting technology as well as the optimization of the thermal resistance of the VECSEL-structures is of key importance to achieving these output characteristics. Besides cw high output power operation these VECSEL device structures form also the basis for improved femto-second pulse, mode-locked VECSEL-structures [6, 7].