Title :
Improved InGaAs/InAlAs photoconductive THz receivers: 5.8 THz bandwidth and 80 dB dynamic range
Author :
Globisch, B. ; Dietz, R.J.B. ; Stanze, D. ; Roehle, H. ; Gobel, T. ; Schell, M.
Author_Institution :
Heinrich Hertz Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
We investigate optimal Be-doping conditions of low-temperature-grown InGaAs/InAlAs photoconductive antennas with respect to their carrier lifetimes and carrier mobility. Employed as THz-TDS receiver bandwidths of 5.8 THz with a dynamic range of up to 80 dB is achieved.
Keywords :
III-V semiconductors; antennas; beryllium; carrier lifetime; carrier mobility; indium compounds; optical materials; optical multilayers; optical receivers; photoconducting devices; photoconducting materials; terahertz wave devices; InGaAs-InAlAs; THz-TDS receiver bandwidths; bandwidth 5.8 THz; carrier lifetimes; carrier mobility; improved InGaAs/InAlAs photoconductive THz receivers; low-temperature-grown InGaAs/InAlAs photoconductive antennas; optimal Be-doping conditions; Charge carrier processes; Indium gallium arsenide; Optical pulses; Optical pumping; Optical receivers; Optical saturation;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
