Title :
Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy
Author :
Islam, S.M. ; Protasenko, Vladimir ; Huili Xing ; Jena, D. ; Verma, Jai
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
GaN/AlN structures are utilized to achieve deep-UV emission. By reducing thickens of GaN QW to 1 ML, 224nm emission is achieved. A further shift to 219 nm is gettable as GaN islands are introduced.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; luminescence; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; GaN QW thickens; GaN islands; GaN-AlN; GaN-AlN quantum structures; deep-UV emission; plasma assisted molecular beam epitaxy; temperature dependence; wavelength 219 nm; wavelength 224 nm; Aluminum gallium nitride; Gallium nitride; III-V semiconductor materials; Plasma temperature; Quantum dots; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
