DocumentCode
1771479
Title
Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy
Author
Islam, S.M. ; Protasenko, Vladimir ; Huili Xing ; Jena, D. ; Verma, Jai
Author_Institution
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
GaN/AlN structures are utilized to achieve deep-UV emission. By reducing thickens of GaN QW to 1 ML, 224nm emission is achieved. A further shift to 219 nm is gettable as GaN islands are introduced.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; luminescence; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; GaN QW thickens; GaN islands; GaN-AlN; GaN-AlN quantum structures; deep-UV emission; plasma assisted molecular beam epitaxy; temperature dependence; wavelength 219 nm; wavelength 224 nm; Aluminum gallium nitride; Gallium nitride; III-V semiconductor materials; Plasma temperature; Quantum dots; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989453
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