Title :
Enhanced light extraction efficiency of deep-ultraviolet light-emitting diodes by Al-coated selective-area-grown GaN stripes
Author :
Dong Yeong Kim ; Jong Won Lee ; Seung Jae Oh ; Sunyong Hwang ; Junhyuk Park ; Jong Kyu Kim
Author_Institution :
Dept. of Mater. Sci. & Eng., POSTECH, Pohang, South Korea
Abstract :
We present a new type of AlGaN-based deep ultraviolet light-emitting diodes with Al-coated selective-area-grown n-type GaN stripes to extract strong side emission perpendicular to the [0001] c-axis and to improve the electrical property.
Keywords :
III-V semiconductors; aluminium; gallium compounds; light emitting diodes; wide band gap semiconductors; Al-GaN; Al-coated selective area grown GaN stripes; LED; deep ultraviolet light emitting diodes; electrical property; enhanced light extraction efficiency; side emission; Aluminum gallium nitride; Gallium nitride; Geometry; Light emitting diodes; Optical polarization; Photoconductivity; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
