• DocumentCode
    1771490
  • Title

    Ga(In)N nanowire light emitting diodes and single photon sources

  • Author

    Bhattacharya, Pallab ; Jahangir, Shafat ; Deshpande, S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ga(In)N nanowires and Ga(In)N quantum disks can be grown defect-free on silicon with p- and n-doping to form diodes. We will describe the characteristics of light-emitting diodes and electrically injected single nanowire single photon sources.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; light sources; nanophotonics; nanowires; quantum optics; semiconductor quantum wires; silicon; Ga(In)N; Si; nanowire light emitting diodes; quantum disks; silicon; single-photon sources; Electroluminescence; Gallium nitride; Light emitting diodes; Photonics; Quantum dots; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771490