• DocumentCode
    1771580
  • Title

    Extended infrared absorption to 2.2 µm with Ge1−xSnx photodetectors grown on silicon

  • Author

    Conley, Benjamin R. ; Liang Huang ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Wei Du ; Sun, Guofa ; Soref, Richard ; Tolle, John ; Naseem, Hameed A. ; Shui-Qing Yu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; germanium compounds; infrared detectors; integrated optics; integrated optoelectronics; optical fabrication; photodetectors; silicon; CMOS compatible process; Ge8.93Sn0.07-Si; extended infrared absorption; responsivity; thin film photodetectors; wavelength 1.55 mum; wavelength 2.2 mum; CMOS integrated circuits; Detectors; Measurement by laser beam; Photodetectors; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1771580