DocumentCode :
1771603
Title :
InGaN quantum dots for high efficiency blue and green light emitters
Author :
Fischer, Arthur J. ; Xiaoyin Xiao ; Tsao, Jeffrey Y. ; Koleske, Daniel D. ; Ping Lu ; Wright, J.B. ; Sheng Liu ; Wang, George T.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.
Keywords :
III-V semiconductors; MOCVD; indium compounds; light emitting diodes; optical fabrication; optical materials; semiconductor quantum dots; InGaN; InGaN materials; InGaN quantum dots; green light emitters; high efficiency blue light emitters; metalorganic chemical vapor deposition; optical studies; post growth processing; structural studies; Gallium nitride; Light emitting diodes; Materials; Quantum dot lasers; Quantum dots; Solid state lighting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989516
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771603
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