DocumentCode :
1771752
Title :
Ge-on-Si integrated photonics
Author :
Jifeng Liu
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We present the latest progress in epitaxial Ge-on-Si lasers, electroabsorption modulators, and photodetectors for integrated photonics. We also discuss an emerging monolithic 3D photonic integration scheme based on high crystallinity GeSn directly grown on SiO2.
Keywords :
electro-optical modulation; elemental semiconductors; germanium; germanium compounds; integrated optics; photodetectors; semiconductor lasers; silicon; silicon compounds; Ge-Si; GeSn-SiO2; electroabsorption modulators; epitaxial Ge-on-Si lasers; integrated photonics; monolithic 3D photonic integration scheme; photodetectors; Absorption; Epitaxial growth; Optical scattering; Optical waveguides; Optimized production technology; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989589
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771752
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