Title :
Buried-heterostructure L3 nanocavity all-optical memory with 2.3-nW power consumption
Author :
Kuramochi, E. ; Nozaki, Kengo ; Shinya, Akihiko ; Taniyama, H. ; Takeda, Kenji ; Sato, Takao ; Matsuo, Shoichiro ; Notomi, M.
Author_Institution :
NTT Nanophotonics Center, NTT Corp., Atsugi, Japan
Abstract :
A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; nanophotonics; optical storage; power consumption; semiconductor heterojunctions; InGaAsP-InP; buried-heterostructure L3 nanocavity all-optical memory; enhanced Q factor; power 2.3 nW; power consumption; small mode volume; tuned L3 design; Memory management; Optical bistability; Optical network units; Optical pulses; Optical resonators; Photonic crystals;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
