Title :
1.3 µm InAs/GaAs quantum dot lasers on SOI waveguide structures
Author :
Tanabe, Kazuki ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
A 1.3-μm InAs/GaAs quantum dot laser on a silicon-on-insulator waveguide structure with a threshold current density of 300 A/cm2 and lasing temperatures greater than 100°C is fabricated by direct wafer bonding and layer transfer.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; integrated optics; laser beams; optical fabrication; optical waveguides; quantum dot lasers; silicon-on-insulator; wafer bonding; InAs-GaAs; InAs/GaAs quantum dot lasers; SOI waveguide structures; direct wafer bonding; lasing temperatures; layer transfer; silicon-on-insulator waveguide structure; threshold current density; wavelength 1.3 mum; Gallium arsenide; Optical waveguides; Quantum dot lasers; Silicon; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
