DocumentCode :
1771993
Title :
A silicon integrated BaTiO3 electro-optic modulator
Author :
Chi Xiong ; Pernice, Wolfram H. P. ; Ngai, Joseph H. ; Reiner, James W. ; Kumah, Divine ; Walker, Frederick J. ; Ahn, Chong H. ; Tang, Hong X.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
A Si-integrated modulator based on epitaxial ferroelectric BaTiO3 thin films is demonstrated with gigahertz modulation bandwidth and an effective Pockels coefficient of 213 ± 49 pm/V.
Keywords :
Pockels effect; barium compounds; electro-optical modulation; elemental semiconductors; epitaxial layers; ferroelectric devices; ferroelectric thin films; integrated optoelectronics; silicon; thin film devices; Pockels coefficient; Si-BaTiO3; epitaxial ferroelectric thin films; gigahertz modulation bandwidth; silicon integrated electro-optic modulator; Optical buffering; Optical imaging; Optical modulation; Optical resonators; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989713
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1771993
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