• DocumentCode
    1772041
  • Title

    Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate

  • Author

    Chia-Hao Chang ; Zong-Lin Li ; Hong-Ting Lu ; Chien-Ping Lee ; Sheng-Di Lin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The mid-infrared electrically-driven laser using InGaAs/GaAsSb `W´-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 μm with the lowest threshold current density of 1.42 kA/cm2 is presented.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; infrared sources; quantum well lasers; InGaAs-GaAsSb; InP substrate; W´-type quantum well laser; low threshold lasers; lowest threshold current density; mid-infrared electrically-driven laser; wavelength 2.35 mum; Cavity resonators; Indium phosphide; Measurement by laser beam; Semiconductor lasers; Substrates; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1772041