DocumentCode :
1772041
Title :
Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate
Author :
Chia-Hao Chang ; Zong-Lin Li ; Hong-Ting Lu ; Chien-Ping Lee ; Sheng-Di Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
The mid-infrared electrically-driven laser using InGaAs/GaAsSb `W´-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 μm with the lowest threshold current density of 1.42 kA/cm2 is presented.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; infrared sources; quantum well lasers; InGaAs-GaAsSb; InP substrate; W´-type quantum well laser; low threshold lasers; lowest threshold current density; mid-infrared electrically-driven laser; wavelength 2.35 mum; Cavity resonators; Indium phosphide; Measurement by laser beam; Semiconductor lasers; Substrates; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1772041
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