Title :
Mid-infrared GaN/AlxGa1−xN Quantum Cascade detectors grown by MOCVD
Author :
Yu Song ; Bhat, Ritesh ; Badami, Pranav ; Tzu-Yung Huang ; Chung-en Zah ; Gmachl, C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
A III-nitride-based Quantum Cascade detector grown by MOCVD is designed, fabricated and tested. Peak responsivity of 100 μA/W with detectivity of up to 108 Jones at ~ 4 μm is measured.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; infrared detectors; optical design techniques; optical fabrication; quantum well devices; semiconductor device testing; wide band gap semiconductors; GaN-AlxGa1-xN; MOCVD; mid-infrared III-nitride-based quantum cascade detector; Detectors; Gallium nitride; MOCVD; Materials; Optical amplifiers; Photoconductivity; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
