Title :
Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band
Author :
Desiatov, Boris ; Goykhman, Ilya ; Shappir, Joseph ; Levy, Uriel
Author_Institution :
Dept. of Appl. Phys., Hebrew Univ. of Jerusalem, Jerusalem, Israel
Abstract :
We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.
Keywords :
elemental semiconductors; energy gap; integrated optics; optical waveguides; p-n junctions; photodetectors; silicon; surface states; Si; defect-assisted sub-bandgap avalanche photodetection; interleaved PN junction configuration; interleaved carrier-depletion silicon waveguide; surface states; telecom band; wavelength 1550 nm; Junctions; Optical device fabrication; Optical resonators; Optical surface waves; Optical waveguides; Photodetectors; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
