Title :
Growth of device-quality orientation-patterned gallium phosphide (OP-GaP) by improved hydride vapour phase epitaxy
Author :
Schunemann, Peter G. ; Mohnkern, Lee ; Vera, Alonzo ; Yang, Xiaoping S. ; Lin, Angie C. ; Harris, James S. ; Tassev, Vladimir ; Snure, Michael
Author_Institution :
BAE Syst., Inc., Nashua, NH, USA
Abstract :
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
Keywords :
III-V semiconductors; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; GaP; device-quality orientation-patterned gallium phosphide; domain propagation; hydride vapour phase epitaxy; quasiphasematched layer thickness; super-saturation; Gallium; Nonlinear optics; Optical device fabrication; Optical pumping; Optical sensors; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
