DocumentCode :
1772426
Title :
Semiconductor nanowire induced photonic-crystal nanocavity with selectable resonant wavelength
Author :
Yokoo, A. ; Takiguchi, M. ; Birowosuto, M.D. ; Zhang, Ge ; Tateno, K. ; Kuramochi, E. ; Taniyama, H. ; Notomi, M.
Author_Institution :
NTT Nanophotonics Center, Atsugi, Japan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
A photonic-crystal nanocavity is induced by a III/V nanowire in a line defect in a Si photonic crystal with several serially-connected lattice constants. The resonant wavelength changes by moving the nanowire along the line defect.
Keywords :
III-V semiconductors; elemental semiconductors; lattice constants; nanophotonics; nanowires; optical resonators; photonic crystals; silicon; III/V nanowire; Si; line defect; photonic-crystal nanocavity; selectable resonant wavelength; semiconductor nanowire; serially-connected lattice constants; Cavity resonators; Lattices; Optical device fabrication; Photonic crystals; Photonics; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989950
Link To Document :
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