• DocumentCode
    177331
  • Title

    Memory persistency

  • Author

    Pelley, Steven ; Chen, Peter M. ; Wenisch, Thomas F.

  • Author_Institution
    Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2014
  • fDate
    14-18 June 2014
  • Firstpage
    265
  • Lastpage
    276
  • Abstract
    Emerging nonvolatile memory technologies (NVRAM) promise the performance of DRAM with the persistence of disk. However, constraining NVRAM write order, necessary to ensure recovery correctness, limits NVRAM write concurrency and degrades throughput. We require new memory interfaces to minimally describe write constraints and allow high performance and high concurrency data structures. These goals strongly resemble memory consistency. Whereas memory consistency concerns the order that memory operations are observed between numerous processors, persistent memory systems must constrain the order that writes occur with respect to failure. We introduce memory persistency, a new approach to designing persistent memory interfaces, building on memory consistency. Similar to memory consistency, memory persistency models may be relaxed to improve performance. We describe the design space of memory persistency and desirable features that such a memory system requires. Finally, we introduce several memory persistency models and evaluate their ability to expose NVRAM write concurrency using two implementations of a persistent queue. Our results show that relaxed persistency models accelerate system throughput 30-fold by reducing NVRAM write constraints.
  • Keywords
    DRAM chips; concurrency control; data structures; multi-threading; DRAM; NVRAM write concurrency; NVRAM write order; design space; disk persistence; high-performance high-concurrency data structures; memory consistency; memory operations; nonvolatile memory technologies; performance improvement; persistent memory interfaces; persistent memory systems; persistent queue; recovery correctness; relaxed persistency models; throughput degradation; write constraints; Abstracts; Acceleration; Nonvolatile memory; Phase change materials; Random access memory; Software;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Architecture (ISCA), 2014 ACM/IEEE 41st International Symposium on
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    978-1-4799-4396-8
  • Type

    conf

  • DOI
    10.1109/ISCA.2014.6853222
  • Filename
    6853222