Title :
Improved SPICE model for Phase Change Memory cell
Author :
El-Hassan, Nemat H. ; Kumar, T. Nandha ; Almurib, Haider A. F.
Author_Institution :
Fac. of Eng., Univ. of Nottingham, Semenyih, Malaysia
Abstract :
This paper presents an LTSpice model for a Phase Change Memory (PCM) cell that accurately simulate the temperature profile, the crystalline fraction and the resistance of the cell as a function of the programming pulse based on physical theories. The model is able to generate the I-V characteristics of a PCM cell, and precisely simulate the drift phenomenon of resistance and threshold voltage at the amorphous phase. The parameters in the model are calibrated with experimental data, and the exact duration of the programming pulse and OFF time are calculated to accurately assess the impact of time. The simulation results of the proposed PCM model are in close agreement with experimental results.
Keywords :
SPICE; phase change memories; I-V characteristics; LTSpice model; PCM cell; amorphous phase; cell resistance; crystalline fraction; improved SPICE model; phase change memory cell; physical theories; programming pulse function; resistance drift phenomenon; temperature profile simulation; threshold voltage; Equations; Integrated circuit modeling; Mathematical model; Phase change materials; Programming; Resistance; Threshold voltage;
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2014 5th International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4799-4654-9
DOI :
10.1109/ICIAS.2014.6869529
