DocumentCode
1773737
Title
Performance analysis of UniTL-H6 inverter with SiC MOSFETs
Author
Barater, Davide ; Buticchi, Giampaolo ; Concari, Carlo ; Franceschini, Giovanni ; Gurpinar, Emre ; De, Debashis ; Castellazzi, Alberto
Author_Institution
Dept. of Inf. Eng., Univ. of Parma, Parma, Italy
fYear
2014
fDate
18-21 May 2014
Firstpage
433
Lastpage
439
Abstract
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.
Keywords
MOSFET; elemental semiconductors; harmonic distortion; invertors; silicon compounds; PV inverters; SiC; UniTL-H6 inverter; current 20 A; silicon carbide MOSFET; voltage 650 V; Frequency modulation; Insulated gate bipolar transistors; MOSFET; Pulse width modulation; Silicon carbide; Switches; Renewable energy; SiC MOSFET; Single phase inverters; Transformerless PV inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location
Hiroshima
Type
conf
DOI
10.1109/IPEC.2014.6869619
Filename
6869619
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