Comparison of different IGBT based designs of power electronic transformer

Author

Xinyu Wang ; Shaodi Ouyang ; Jinjun Liu ; Fei Meng ; Javed, Rabia

Author_Institution

State Key Lab. of Electr. Insulation & Power Equip., Xi´an Jiaotong Univ., Xi´an, China

fYear

2014

fDate

18-21 May 2014

Firstpage

624

Lastpage

628

Abstract

Power electronic transformer (PET) has many merits as compared with conventional power transformer. For high-voltage high-power applications, silicon based IGBT and the cascaded modular structure are still the mainstream power semiconductor device and structure, respectively. In this paper, a basic design process of the power stage of an H-bridge based three-stage PET system is presented. Based on the design process, different PET designs based on different voltage rating IGBTs are done and compared. This is a reference for practical PET system design.

Keywords

insulated gate bipolar transistors; power semiconductor devices; power transformers; H-bridge based three-stage PET system design; cascaded modular structure; high-voltage high-power applications; mainstream power semiconductor device; power electronic transformer; silicon based IGBT; Heating; Insulated gate bipolar transistors; Positron emission tomography; Switches; Thermal resistance; Topology; Power electronic transformer; cascaded modular structure; three-stage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International

Conference_Location

Hiroshima

Type

conf

DOI

10.1109/IPEC.2014.6869651

Filename

6869651