DocumentCode :
1773810
Title :
Next-generation IGBT module structure for hybrid vehicle with high cooling performance and high temperature operation
Author :
Morozumi, Akira ; Gohara, Hiromichi ; Momose, Fumihiko ; Saito, Takashi ; Nishimura, Yasutaro ; Mochizuki, Eiji ; Takahashi, Y.
Author_Institution :
Electron. Device Lab., Fuji Electr. Co., Ltd., Matsumoto, Japan
fYear :
2014
fDate :
18-21 May 2014
Firstpage :
671
Lastpage :
676
Abstract :
We developed a new technology for the Fuji 4th generation power module for hybrid vehicle application. It achieved a 30-% volume reduction, and a 33-% weight reduction compared to the 3rd generation. Requirement trends for the power module for hybrid vehicles are high energy-efficient, downsizing, lightweight and higher reliability. To achieve these requirements, IGBT module needs low thermal resistance and high operating temperature. We developed new technologies, 1) New cooling structure with high cooling performance. 2) The Tjmax.=175°C continuous operation with automotive required quality.
Keywords :
cooling; hybrid electric vehicles; insulated gate bipolar transistors; Fuji 4th generation power module; high cooling performance; high temperature operation; hybrid vehicle; low thermal resistance; next-generation IGBT module structure; Automotive engineering; Ceramics; Cooling; Heating; Insulated gate bipolar transistors; Reliability; Substrates; Direct Liquid Cooling; High Reliability; High Temperature Operation; Hybrid Vehicle; IGBT Module;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
Type :
conf
DOI :
10.1109/IPEC.2014.6869659
Filename :
6869659
Link To Document :
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