Title :
Contactless DC connector based on GaN LLC converter for next generation data centers
Author :
Hayashi, Yasuhiro ; Toyoda, Hajime ; Ise, Toshifumi ; Matsumoto, Akiyoshi
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
Contactless DC connector has been proposed for the next generation 380 V DC distribution system in data centers. A LLC resonant DC-DC converter topology with Gallium Nitride (GaN) power transistors has been applied to realize the short-distance inductively-coupled connector. A prototype of a 1.2 kW 384 V-192 V connector has been fabricated under 500 kHz operation. The conversion efficiency of 95% has been confirmed, and the approach for realizing higher efficiency has been also shown. The contactless DC connector integrates the functioning of an isolated DC-DC converter into a connector for space-saving. The DC current can be cut off without arc because of the inductive coupling. The proposed connector contributes to realizing highly efficient, space-saving and reliable future DC distribution system.
Keywords :
DC-DC power convertors; III-V semiconductors; computer centres; electric connectors; gallium compounds; power distribution; power transistors; resonant power convertors; wide band gap semiconductors; GaN; LLC resonant DC-DC converter topology; contactless DC connector; frequency 500 kHz; gallium nitride power transistors; inductive coupling; isolated DC-DC converter; next generation DC distribution system; next generation data centers; power 1.2 kW; short-distance inductively-coupled connector; voltage 380 V; voltage 384 V to 192 V; Contacts; Frequency conversion; Plugs; Rectifiers; Switches; Transformer cores; Contactless Power Supply; DC Distribution; DC-DC Converter; Gallium Nitride;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869792