Title :
A wide speed range high efficiency EV drive system using winding changeover technique and SiC devices
Author :
Takatsuka, Yasuhiro ; Hara, Hideki ; Yamada, Koji ; Maemura, Akihiko ; Kume, Tsuyoshi
Author_Institution :
Corp. R&D Center, YASKAWA Electr. Corp., Kitakyushu, Japan
Abstract :
The Silicon Carbide (SiC) based devices will become the mainstream in the motor drive technology in the near future. These next generation power devices give benefits of lower losses, higher voltage, and high temperature operation in the power conversion system, realizing its downsizing and high power density. The winding change over technique, on the other hand, is useful to extend the speed control range with high efficiency of ac motors. This paper describes the effects of using high power SiC MOSFET and SiC SBD, together with the electronic winding changeover technique in the EV motor drives.
Keywords :
MOSFET; electric vehicles; elemental semiconductors; motor drives; power convertors; silicon compounds; EV motor drives; SiC; ac motors; electronic winding changeover technique; motor drive technology; next generation power devices; power conversion system; silicon carbide MOSFET; silicon carbide SBD; DC motors; Logic gates; MOSFET; Prototypes; Silicon carbide; Torque; Windings; EV drive system; SiC device; Winding changeover technique;
Conference_Titel :
Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International
Conference_Location :
Hiroshima
DOI :
10.1109/IPEC.2014.6869844